Recent Posts

Beyond Silicon

Follow

Follow X

Sign up   |   Log in

  • Minimum length of 8 characters

    Wireless charging: A wide-bandgap sweet spot?

    Wireless power transfer eliminates worries over compatible connectivity

    By Alix Paultre | June 28, 2017

    wireless chargingExcept for those closeted away in secure labs, working on top-secret projects, electronics engineers (EEs) know by now that wide-bandgap semiconductors outperform silicon devices in just about every way. But, figuring out what actual performance benefits might accrue to a specific application is still something of a mystery. A look at the challenging world of wireless charging might illustrate how next-generation solutions can deliver performance benefits unmatchable in silicon.

    Beyond Silicon

    Follow

    Follow X

    Sign up   |   Log in

    • Minimum length of 8 characters

      Which is better? SiC or GaN?

      Proper device selection ensures optimal performance

      By Alix Paultre | June 17, 2017

       

      It is all well and good to point out that wide-bandgap materials like silicon carbide (SiC) and gallium nitride (GaN) are superior performers to legacy silicon, but what does that really mean to the designer? What application spaces can best benefit from the next generation of semiconductors? There is a difference between frequency-oriented applications like RF and LiDAR and energy-oriented applications like power electronics; wide-bandgap devices, properly chosen, can serve both well.

      Beyond Silicon

      Follow

      Follow X

      Sign up   |   Log in

      • Minimum length of 8 characters

        What is the difference between GaN and SiC?

        Each material has its pluses and minuses

        By Alix Paultre | June 5, 2017

        Characteristics of SiC, GaN and Silicon

        The wide-bandgap revolution is still in its infancy, but we have finally reached the point where promise is being followed by product. Every major embedded manufacturer now has a wide-bandgap play, if only to demonstrate to the marketplace that they are players. Partnerships between the technology developers and mainstream semiconductor companies are coupling disruptive tech with trusted sources to ease migration pains.

        Beyond Silicon

        Follow

        Follow X

        Sign up   |   Log in

        • Minimum length of 8 characters

          Why use wide-bandgap semiconductors?

          They're not one-for-one replacements for silicon

          By Alix Paultre | June 1, 2017

          Packaging is a critical issue in wide-bandgap semiconductor development.

          Buzz about the promise of wide-bandgap semiconductors abounds, but engineers are only just starting to look to them as real solutions, not mere hype. There are still birthing pains, but mainstream acceptance of the technology appears imminent.

          Still, it is relevant to ask why wide-bandgap is such a disruptive technology.

          Beyond Silicon

          Follow

          Follow X

          Sign up   |   Log in

          • Minimum length of 8 characters

            Empowering the green revolution with wide-bandgap semiconductors

            Wide-bandgap semiconductors outperform traditional Silicon

            By Alix Paultre | May 23, 2017

            The electronic design industry is in the midst of a near-perfect storm of disruptive sea change, one sending ripples and waves large and small through our entire economy. Inter-related yet distinct, these challenges come from recent technological advances being commercialized and entering the marketplace. New topologies, methodologies, and materials have created opportunities, markets, and application spaces.

            Beyond Silicon

            Follow

            Follow X

            Sign up   |   Log in

            • Minimum length of 8 characters

              GaN transistors to demo power efficiency at APEC 2107 show in Florida

              By Majeed Ahmad | March 21, 2017

              photo_of_gaN_module

              TI’s GaN-based LMG5200 module for 48V-to-POL applications in datacenters (shown on top) uses eGaN power FETs from EPC.

              Gallium nitride (GaN) chips are going to have a show of power — and how they can boost power density and energy efficiency — at the Applied Power Electronics Conference (APEC) being held on 26-30 March 2017 in Tampa, Florida.

              Texas Instruments will showcase how its GaN-based 48 to POL half-bridge controllers can facilitate greater energy efficiency at the AC-to-processor stage.

              Beyond Silicon

              Follow

              Follow X

              Sign up   |   Log in

              • Minimum length of 8 characters

                Guest blog: Electric vehicles: less power to the driver

                February 24, 2017

                By Nagarajan Sridhar

                A couple of months ago, I got a chance to test-drive a new autonomous vehicle. My general observation: it was a computer on wheels! Because of the traction motor (a key characteristic of electric vehicles [EVs]), it was totally silent, with no whirring sound from the integrated circuit-based engine. Also memorable was experiencing autopilot mode, which is the predecessor to the autonomous driverless vehicular concept.

                Beyond Silicon

                Follow

                Follow X

                Sign up   |   Log in

                • Minimum length of 8 characters

                  Silicon carbide on the road to automotive electrification

                  By Majeed Ahmad | January 2, 2017

                   

                  Higher voltages and currents increase power density while reducing switching losses. Image courtesy of Infineon Technologies.

                  The automotive industry has long been focusing on the higher efficiency of the combustion engine and electrification of the drivetrain in hybrid and fully electric vehicles to meet CO2 emission goals. Now we finally see a tipping point with a greater availability of silicon carbide (SiC) chips that offer extremely low power losses and higher temperature resistance.